Keynote Speaker
Jesus del Alamo (MIT, USA), "III-V's: From THz to CMOS"

Invited Speakers 
James A. Cooper (Purdue Univ., USA), "SiC Devices"
Sylvain Delage (Alcatel-Thales, France), "AlInN/GaInN HEMTs"
Nicolas Grandjean (EFL, Switzerland), "AlInN/GaN Heterostructures for Electronic Applications"
Hidetoshi Ishida (Panasonic, Japan), "GaN-based HFETs and Diodes with Ultra High Breakdown Voltages"
Debdeep Jena (Univ. Notre Dame, USA), "Graphene Transistors"
Jose L. Jimenez (Triquint, USA), "Recent Advances on the Understanding of the Physics of Failure of GaN Power Amplifiers"
Hiroshi Kondoh (Hitachi, Japan), "Comparison of III-V and Si-based Processes for mm-wave Applications"
Sungjoo Lee (Nat. Univ. Singapore, Singapore), "High Mobility III-V MOSFETs: Gate Stack Integration and Performances"
Noren Pan (Microlink, USA), "Epitaxial Lift-off of GaAs and InP Solar Cells for Space and Terrestrial Applications"
Ruediger Quay (Fraunhofer IAF, Germany), "Highly Efficient GaN HEMT SSPAs"
Evan J. Reed (Lawrence Livermore Lab, USA), "Probing Semiconductor Heterostructures with Coherent Radiation Generated by THz Frequency Acoustic Waves"
Mark Rodwell (UCSB, USA), "Scaled InGaAs HEMTs for beyond CMOS"
Shigehiko Sasa (Osaka Inst. Tech., Japan), "High-Performance ZnO TFTs and Their Applications"
Mark W. Wanlass (National Renewable Energy Laboratory, USA), "Inverted Metamorphic Multi-Junction Solar Cells"
Lars-Erik Wernersson (Lund Univ. Sweden), "III-V Heterostructure Nanowires: Antimonides and HFETs"
Hiroshi Yamaguchi (NTT, Japan), "Compound Semiconductor Micro/Nanomechanical Systems"